Silicon on Ceramics

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Start Research Properties

Properties

•    High bonding strength of the wafer compound: 5474 N/cm²
•    Gas tight bonding (bond frame width > 1.5 mm): 1.1 10-8 mbar l/s
•    Temperature-stable substrate (depending on used metals): up to 700°C
•    Semi transparent ceramic layer
•    Substrate fabrication as wafer form (e.g. 100 mm): compatible to MEMS processing