Silicon on Ceramics

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SiCer Technology

The fabrication of the SiCer wafer compound material is based on a bonding procedure between silicon and an unfired ceramic material. A LTCC tape with adapted TCE to silicon (trade name BGK) is joined with a silicon wafer during a standard lamination procedure. Subsequent pressure assisted sintering is utilized to co-fire the composite. The nano-structured interface leads to an ultra-strong form- and material-locking contact between both materials (glass phase of BGK and silicon dioxide).

General fabrication steps of the SiCer-substrate

The SiCer substrate enables a wide range of design solutions. The functional silicon surface is bonded to prefabricated ceramic tapes with vias, wirings and fluidic channels. After sintering, the ceramic acts as a mechanical carrier system with electrical and fluidic connections. To ensure the electronical/sensor functionalities of MEMS devices, only a thin silicon layer is necessary. The separation of silicon areas can be easily done by standard silicon etching, while the ceramic works as a natural etching barrier. Consequently, the SiCer-technology enables system packaging on wafer level.